Hot holes in strained MQW InGaAs/GaAs and Ge/GeSi heterostructures

摘要

Cyclotron resonance and IR emission of hot holes instrained multi-quantum well In_xGa_(1-x)As/GaAs and Ge/Ge_(1-x)Si_x heterostructures excited by lateral electric fields were investigated for the first time. Dynamical heating and streaming motion of two-dimensional charge carriers are shown to take place in Ge/Ge_(1-x)Si_x heterostructures. In In_xGa(1-x)As/GaAs heterostructures, the emission resulted from both the optical transitions between hole subbands in quantum wells and from transitions between resonant states in the continuum and well states under the real space transfer conditions was revealed. The discovered highly nonequilibrium phenomena open new possibilities for population inversion and amplification of far and middle infrared radiation.