Characterization of incoming PVA brush by an ultrasonication break-in process

摘要

Since Chemical Mechanical Planarization (CMP) process was introduced to the semiconductor industry, post-CMP cleaning process became one of the primary challenges in the semiconductor manufacturing process. Polyvinyl alcohol (PVA) brush cleaning has been used for post-CMP cleaning process with various chemical cleaning solutions as the most effective method in contaminant removal due to its physical force by direct contact between the brush and wafer surface with low cost of ownership (COO) [1]. However, incoming PVA brush has low cleaning performance and even also defects will be generated due to the presence of impurities in the incoming brush [2].