Study of real time chamber monitoring for the contamination factor on the Post CMP Clean progress

摘要

In semiconductor, CMP process works for the planarization of various thin film such as Oxide, Nitride, Metal and etc. CMP process uses many kinds of material like slurry, wet chemical and DIW so that it makes the film on the wafer flat with mechanical and chemical reaction. After CMP process is done, wafer should be cleaned in order to get rid of some residue particles from CMP and we call this process 'Post CMP Clean'. Post CMP Clean uses 2 brushes with DIW and some chemical like H_2O_2 to detatch the particle physically and then wafer could be cleaned again with only DIW on spin single cleaner if it is necessary and then in the last wafer could be dried with various way like spin dry, N2 dry, IPA dry, Marangony dry and etc. In the result, CMP process is composed with the CMP for planarization, the Post CMP Clean for removing residue, the Dry for removing liquid continuously.