Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity

机译：磷光和热刺激的发光强度与静止X射线发光强度的比例

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Comparative analysis of the experimental results of X-ray luminescence, phosphorescence and thermally-stimulated luminescence intensities for different emission bands in ZnSe revealed that for 630 nm luminescence centers there are two recombination mechanisms existing - electron and hole.

机译：对ZnSE不同发射带的X射线发光，磷光和热刺激发光强度的实验结果的比较分析显示，对于630nm发光中心，存在两种复合机制 - 电子和孔。

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《International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications》|2014年||共2页
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Pavlova N.Yu.; Degoda V.Ya.; Podust G.P.;
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中图分类 TB341;
关键词
Luminescence; X-ray luminescence; phosphorescence; thermally-stimulated luminescence and conductivity;

机译：发光;X射线发光;磷光;热刺激的发光和电导率;

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机译：ZnSe晶体的X射线电导率和X射线发光对激发强度的依赖性
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机译：X射线电导率和X射线发光对ZnSe晶体对激发强度的依赖性
4. Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity [C] . Pavlova N.Yu., Degoda V.Ya., Podust G.P. International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications . 2014

机译：磷光和热激发发光强度与固定X射线发光强度之比
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Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity

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