Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity

机译：磷光和热激发发光强度与固定X射线发光强度之比

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Comparative analysis of the experimental results of X-ray luminescence, phosphorescence and thermally-stimulated luminescence intensities for different emission bands in ZnSe revealed that for 630 nm luminescence centers there are two recombination mechanisms existing - electron and hole.

机译：对ZnSe中不同发射带的X射线发光，磷光和热激发发光强度的实验结果进行比较分析，发现对于630 nm发光中心，存在两种复合机制-电子和空穴。

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来源
《International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications》|2014年|263-264|共2页
会议地点 Lviv(UA)
作者
Pavlova N.Yu.; Degoda V.Ya.; Podust G.P.;
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作者单位

National Pedagogical Dragomanov University, Kyiv, Ukraine;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Luminescence; X-ray luminescence; phosphorescence; thermally-stimulated luminescence and conductivity;

机译：发光； X射线发光；磷光热刺激的发光和电导率；;

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4. Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity [C] . Pavlova N.Yu., Degoda V.Ya., Podust G.P. International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications . 2014

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Ratio of phosphorescence and thermally-stimulated luminescence intensities to stationary X-ray luminescence intensity

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