Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs

摘要

This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57 % PAE, with drain efficiency as high as 62 %. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.