Highly Linear Bipolar Transconductor For Broadband High-Frequency Applications with Improved Input Voltage Swing

摘要

An all n-p-n highly linear wide-bandwidth bipolar transconductor (G_m) stage is presented based on a variation of Caprio''s quad. The high-frequency (HF) linearity of the improved G_m cell is examined by a Volterra analysis. The improved G_m cell has a higher input voltage swing range than other approaches