18.2 GHz Differential Low Noise Amplifier for On-chip Ultra Wide Band Transceiver

摘要

In this paper an 18.2 GHz differential low noise amplifier (LNA) is proposed for use in on chip ultra wide band transceiver. We used TSMC 0.35 mum process MOSFET model parameters and the simulations are carried out using Cadence Spectre simulator. The single stage differential LNA shows 22.06 dB voltage gain at 18.2 GHz with a operating frequency band of 7.87 GHz. It achieves 0.4162 dB noise figure, S₁₁=-16.701 dB, S₁₂=-6.46916 dB, S₂₁ =3.61662 dB, S₂₂=-7.7075 dB. Its 1 dB compression point is -14.599 dBm and input referred IP₃ is -10.9778 dBm. The circuit operates at +1 V and -1 V supply voltage and consumes 0.50 mW power