Frequency Multiplier Design Based on Multiple-Peak R-BJT-NDR Devices Fabricated by SiGe Technology

摘要

The negative differential resistance (NDR) device studied in this work is composed of the resistors (R) and bipolar junction transistors (BJT) devices. We regard this NDR device as R-BJT-NDR. Comparing to the resonant tunneling diode (RTD), this novel NDR device is made of resistors and transistors. Therefore, we can fabricate this NDR device by standard Si-based CMOS or SiGe-based BiCMOS process. A circuit with two NDR regions is obtained by combining two R-BJT-NDR devices in vertical integration. We can obtain two-peak I-V characteristics in the combined circuit. Circuit fabricated from the combination exhibits three stable operating points for frequency multiplier that can multiply the input signal frequency by three. The R-BJT-NDR device and frequency multiplier are implemented by the standard 0.35驴m SiGe BiCMOS process.