Modeling and estimation of failure probability due to parameter variations in nano-scale SRAMs for yield enhancement

摘要

In this paper we have analyzed and modeled the failure probabilities (access time failure, read/write stability failure, and hold stability failure in the stand-by mode) of SRAM cells due to process parameter variations. A method to predict the yield of a memory chip designed with a cell is proposed based on the cell failure probability. The developed method can be used in the early stage of a design cycle to optimize the design for yield enhancement.