Charge storage characteristics of SiO/sub 2//Si/sub 3/N/sub 4/ double layer electret

摘要

SiO/sub 2//Si/sub 3/N/sub 4/ double layer has better charge storage stability than SiO/sub 2/ single layer. The charge storage mechanism of SiO/sub 2//Si/sub 3/N/sub 4/ has been the subject of interest for many researchers. This paper investigates the electrical characteristics of thermal oxide and the atmospheric pressure chemical vapor deposition (APCVD) Si/sub 3/N/sub 4/ using high frequency capacitance voltage measurements. Additionally, this paper describes the capacitance-voltage characteristics of SiO/sub 2//Si/sub 3/N/sub 4/ double layer obtained through Athena, a semiconductor device simulation tool made by Silvaco, Inc.