Oxidation Suppression for YbSi2-X Formation and New Method to Extract Schottky Barrier Height by Admittance Measurement

摘要

In this paper, a bi-layered Ti/TiN capping is proposed and demonstrated to be very effective to suppress oxygen contamination, and to allow the formation of Yb-silicide using conventional PVD and RTA systems. It is revealed that the diffusion of Ti into TiN layer plays the key role for oxidation suppression. The admittance measurement is proposed to extract Schottky contact barrier height. In this method, as long as the admittance at zero bias and a reasonably high forward bias are obtained, the barrier height can be extracted, including those of moderately lower barrier heights (0.2-0.4eV).