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Study on the Low-looped Ability of Forward and Reverse Looping Methods of Gold Wire Ball Bonding for Stacked Die Package Application

机译:叠层模封装金丝球焊正反循环方法低循环能力研究

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The packaging technology is driving to lower loop height level with the developments of multiple level stacked die packages and multi-tiered IC packages. It is very important to find moderate low-looped method to achieve perfect bondability and low-looped ability. The effects of looping methods on the bondability and low-looped ability were studied and analyzed. The study results shows that the low-looped ability of reverse looping is much better than that of forward looping due to the differences on the bonding mechanism and process between them; and SSB2 reverse looping can achieve very small low-looped height. For the forward looping, bonding quality is acceptable when looping height is higher than 110mum, but the cracks can be found on the neck zone of gold wire once the looping height is lower than 90mum. However, for the SSB2 reverse looping, after the optimizing selections on the reverse looping mode and capillary tip type, the looping height can be controlled from 60mum to 110mum effectively. Finally, the SSB2 reverse looping method optimized was applied in three-layer stacked die package, and the bonding quality and reliability are tested. The results show shows that the low-looped bonding ability of SSB2 reverse looping is completely acceptable, and the bonding process is stable and suitable for mass production
机译:随着多层堆叠裸片封装和多层IC封装的发展,封装技术正在推动将环路高度降低。找到适度的低环方法以实现完美的键合性和低环能力非常重要。研究并分析了成环方法对键合能力和低成环能力的影响。研究结果表明,由于它们之间的键合机理和过程的差异,反向循环的低循环能力比正向循环要好得多。 SSB2反向循环可以实现非常小的低循环高度。对于正向绕线,当绕线高度高于110mum时,键合质量是可以接受的,但是,当绕线高度低于90mum时,金线的颈部会出现裂纹。但是,对于SSB2反向循环,在对反向循环模式和毛细管尖端类型进行了优化选择之后,可以有效地将循环高度控制在60μm至110μm之间。最后,将优化后的SSB2反向循环方法应用于三层堆叠管芯封装中,并测试了键合质量和可靠性。结果表明,SSB2反向环的低环键合能力是完全可以接受的,键合过程稳定,适合批量生产。

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