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Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on Strained-Si

机译：应变硅上超薄二氧化锆（ZrO2）膜的可靠性

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This paper report on the reliability properties of microwave-plasma deposited ultrathin high-k gate dielectric (ZrO₂) films on strained-Si/SiGe layers. Stress induced leakage current; trap centroid and charge trapping behavior under constant current and voltage stressing in both polarities have been studied

机译：本文报道了在应变Si / SiGe层上微波等离子体沉积的超薄高k栅极电介质（ZrO _{2 ）薄膜的可靠性。应力引起的泄漏电流;研究了在两种极性下恒流和恒压下的陷阱陷阱质心和电荷陷阱行为}

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《》|2006年|295-300|共6页
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M.K. Bera; C.K. Maiti;
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high-k dielectric thin films; integrated circuit reliability; leakage currents; ZrOsub2/sub-Si-SiGe; charge trapping; constant current stress; constant voltage stress; high-k gate dielectric; microwave-plasma deposition; reliability property; stress induced lea;

机译：高k介质薄膜;集成电路可靠性;漏电流; ZrO _{2 -Si-SiGe;电荷俘获;恒定电流应力;恒定电压应力;高k栅介质;微波等离子体沉积;可靠性;应力诱导;}

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专利

1. Reliability Of Ultra-thin Titanium Dioxide (tio_2) Films On Strained-si [J] . M.K. Bera. C. Mahata, C.K. Maiti Thin Solid Films . 2008,第1期

机译：应变硅上超薄二氧化钛（tio_2）薄膜的可靠性
2. Charge trapping properties of ultra-thin TiO_2 films on strained-Si [J] . M K Bera, C K Maiti Semiconductor science and technology . 2007,第7期

机译：应变硅上超薄TiO_2薄膜的电荷俘获特性
3. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures [J] . John B. Varzgar, Mehdi Kanoun, Suresh Uppal, Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2006,第3期

机译：应变Si / SiGe MOS结构上超薄栅极氧化物的可靠性研究
4. Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on Strained-Si [C] . M.K. Bera, C.K. Maiti International Symposium on Physical and Failure Analysis of ICs . 2006

机译：在应变型Si上的超薄锆二氧化锆（ZrO2）薄膜的可靠性
5. Structure and low-temperature tribology of lubricious nanocrystalline zinc oxide/aluminium oxide nanolaminates and zirconium dioxide monofilms grown by atomic layer deposition. [D] . Romanes, Maia Castillo. 2008

机译：通过原子层沉积法生长的润滑性纳米晶状氧化锌/氧化铝纳米层压板和二氧化锆单膜的结构和低温摩擦学。
6. Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone [O] . Junqing Liu, Junpeng Li, Jianzhuo Wu, 2019

机译：四（二甲基氨基）锆和臭氧原子层沉积生长的高k ZrO2薄膜的结构和介电性能
7. Synthesis, Characterization and Properties of Zirconium Oxide (ZrO2)-Doped Titanium Oxide (TiO2) Thin Films Obtained via Sol-Gel Process [O] . Rabah Bensaha, Hanene Bensouy 2012

机译：氧化锆（ZrO2） - 掺杂氧化钛（TiO2）薄膜的合成，表征和性质，通过溶胶 - 凝胶工艺获得

Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on Strained-Si

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