Computer-Aided Design Methodology for Electrostatic Discharge (ESD) Protection Applications

摘要

Physical mechanisms that define the triggering conditions of lateral P₁N₁-P₂N₂ structures for ESD (electrostatic discharge) protection are identified using 2D numerical simulations. The TCAD (technology computer aided design) allows for accurate prediction of the forward and reverse blocking voltages, necessary for custom ESD protection design. Symmetrical and asymmetrical dual-polarity S-type I-V characteristics are achieved for bipolar input/output ESD protection design. This is realized by using 1) tailored forward-and reverse- blocking junction configurations embedded in coupled (P₁N₁-P₂N₂)//(N ₂P₃-N₃P₁) structures, and 2) optimized adjustment of the structures'' doping implantations and isolation regions