Etch characterization of packaged IC samples in an RIE with endpoint detection by ICP source for failure analysis applications

摘要

In this paper, we propose an accurate endpoint detection method to address etch accuracy and sample overheating, which are major challenges associated with dry etch of multilayer ICs in BGA packages for failure analysis applications. An RIE reactor equipped with an inductively-coupled plasma (ICP) unit was employed. Etch characterization was performed on advanced graphics ICs in BGA packages. We also report on experimentation with procedural development and hardware configuration to combat device overheating.