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Material parameters of rf magnetron sputtered SiO/sub 2/ thin films for temperature stable SiO/sub 2//LiNbO/sub 3/ saw devices

机译:用于温度稳定的SiO / sub 2 // LiNbO / sub 3 /锯切设备的射频磁控溅射SiO / sub 2 /薄膜的材料参数

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SAW propagation characteristics, velocity and temperature coefficient of delay (TCD) of a 128/spl deg/ Y-X LiNbO/sub 3/ SAW device integrated with an over-layer of rf magnetron sputtered SiO/sub 2/ film have been studied. A deviation in the experimental observations with respect to the theoretical calculations on the layered structure SiO/sub 2//LiNbO/sub 3/ are identified mainly due to the difference in the material parameters of the deposited SiO/sub 2/ film. Influence of deposition conditions on the materials parameters of SiO/sub 2/ thin film have been studied, and the representative values of density, dielectric constant, elastic constants (C/sub 11/ and C/sub 44/) and their temperature coefficients have been determined, required for the design of a temperature stable SAW device.
机译:研究了集成有射频磁控溅射SiO / sub 2 /薄膜的128 / spl deg / Y-X LiNbO / sub 3 / SAW器件的表面声波传播特性,速度和温度延迟系数(TCD)。相对于在层状结构SiO / sub 2 // LiNbO / sub 3 /上的理论计算,实验观察中的偏差主要是由于所沉积的SiO / sub 2 /膜的材料参数的差异所致。研究了沉积条件对SiO / sub 2 /薄膜材料参数的影响,密度,介电常数,弹性常数(C / sub 11 /和C / sub 44 /)及其温度系数的代表值分别为已确定,这是设计温度稳定的SAW装置所必需的。

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