An 18-71 GHz multi-band and high gain GaAs MMIC medium power amplifier for millimeter-wave applications

摘要

This paper presents the design and measurement results of a broadband high gain MMIC medium power amplifier. The proposed 18-71 GHz multiband amplifier provides a single chip solution for all 28 GHz, 38 GHz, and 60 GHz millimeter-wave applications with a chip size of 2.5 mm /spl times/ 1 mm. The high gain performance of more than 20 dB from 41-63 GHz has been attained. It provides at least 16 dBm of maximum output power from 19-57 GHz. This amplifier consists of one distributed stage for broadband design and cascaded single-ended stages for medium power output. This chip demonstrates the highest frequency application using this combined topology compared with all previously published results. The circuit was fabricated with a 0.15-/spl mu/m gate-length GaAs-based HEMT MMIC technology.