Post-chemical-mechanical planarization cleaning application in metallization

摘要

Chemical-Mechanical Polishing (CMP) has emerged as the most important technique for achieving both local and global planarization in VLSI fabrication. One of the primary concerns in the use of CMP, however, is the efficient and complete removal of CMP contaminants such as slurry and polishing debris. This paper discusses the removal of alumina-based slurries utilized for the planarization technique of metal interconnect processes. The analysis of the treatment of the post-CMP metallized wafer surface with an aqueous solution, and the application of the chemical solution insitu to the polishing processes are presented.