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Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters

机译：具有低热预算原位磷掺杂单晶硅发射极的深亚微米双极晶体管的改进电特性

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《》|2000年|P.255-258|共4页
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Abdul-Rahim; A.I.; Marsh; C.D.;
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中图分类无线电电子学、电信技术;
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1. Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements [J] . Kondo M., Kobayashi T. IEEE Transactions on Electron Devices . 1995,第3期

机译：磷掺杂的多晶硅发射极晶体管的类似杂发射极的特性。第一部分：通过电学测量获得的多晶硅发射极中的能带结构
2. Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base [J] . Uchino T., Shiba T. IEEE Transactions on Electron Devices . 1995,第3期

机译：具有原位掺杂多晶硅发射极和快速气相掺杂基极的超高速硅双极晶体管
3. Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part II: band deformation due to residual stress in the polysilicon emitter [J] . Kondo M., Kobayashi T. IEEE Transactions on Electron Devices . 1995,第3期

机译：磷掺杂的多晶硅发射极晶体管的类似杂发射极的特性。第二部分：由于多晶硅发射极中的残余应力导致的带变形
4. Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters [C] . Abdul-Rahim A.I., Marsh C.D., Nash G.R., International Conference on Microelectronics . 2000

机译：利用低热预算掺杂单晶硅发射器的低热预算，改善了深度亚微米双极晶体管的电气特性
5. MINORITY CARRIER TRANSPORT IN HEAVILY DOPED N-TYPE SILICON (EMITTERS, PHOSPHORUS EPITAXY, BIPOLAR TRANSISTOR, BANDGAP NARROWING, SOLAR CELL). [D] . DEL ALAMO, JESUS ANGEL. 1985

机译：重掺杂N型硅中的少数族裔载运子（发射极，磷表皮，双极晶体管，能隙窄带，太阳能电池）。
6. Low‐Thermal‐Budget Doping: Low‐Thermal‐Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron‐Doped Reduced Graphene Oxide (Adv. Sci. 7/2020) [O] . Jun‐Hwe Cha, Dong‐Ha Kim, Cheolmin Park, 2020

机译：低热预算掺杂：环境空气中二维材料的低热预算掺杂以硼掺杂的还原氧化石墨烯的合成为例（Adv。Sci。7/2020）
7. Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus doped polysilicon emitter contacts [O] . Rahim A I A, Marsh C D, Ashburn P, 2001

机译：非原位和原位清洗对具有低热预算的原位磷掺杂多晶硅发射极触点的双极晶体管性能的影响
8. High Frequency Silicon Bipolar Transistor with SIPOS (Semi-Insulating Polycrystalline Silicon) Heterojunction Emitter and Ion Implanted Rapid Thermal Annealed Base Region [R] . Wortman, J. J., Hauser, J. R., Littlejohn, M. A., 1985

机译：具有sIpOs（半绝缘多晶硅）异质结发射极和离子注入快速热退火基区的高频硅双极晶体管

Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters

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