The equivalent transmission-line approach to resonant tunneling problems described by the Kane model

摘要

This paper presents a method for solving resonant tunneling problems described by Kane's two-band and three-band models. The method is based on equivalent transmission-lines for the two-band and three-band models. The well-developed theory of transmission-lines can be effectively used to calculate the transmission properties of resonant tunneling structures. By using the proposed method, quantum mechanical wave problems in resonant tunneling structures composed of various semiconductor materials can be systematically analyzed and guidelines are given for designing new electron wave devices.