Test methodology for low power SRAM's (Is Iddq test useful for low power SRAM's?)

摘要

The increase in integrity of the recent VLSI technology has enabled a trend of small and portable applications. These portable applications, like notebook computers and cellular phones, need the high-performance and low-power consumption. In most products the major power consuming elements are the memories. So low power memory technology has been developed. But the test features have not been studied sufficiently. This paper provides a test methodology useful for low power SRAM's. Also simulation results for the Driving Source Line technology show how useful the Iddq test is.