HMS rectifier: a novel hybrid MOS Schottky diode concept with no barrier lowering, low leakage current and high breakdown voltage

摘要

In this paper we propose and demonstrate a novel Schottky device concept, which is capable of achieving ultra low leakage current with high breakdown voltage. The proposed Schottky diode is conceived and designed with a lateral configuration for deep sub-micron smart power technologies but can also be designed in a vertical discrete configuration. A combination of depletion mode MOSFET and n or p-type Schottky junctions are utilized to create hybrid MOS Schottky (HMS) diode where the high reverse bias voltage is blocked by the MOSFET. The device is first demonstrated in a circuit configuration with discrete Schottky diode and a MOSFET. Subsequently, low separate monolithic integrated versions of the diode are proposed and realized. The integrated version of the diode achieved near-ideal characteristics with an ideality factor, n of 1.04 and a barrier height o/sub B/ of 0.64eV.