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Characterization of thin film cadmium sulfide grown using a modified chemical bath deposition process

机译:使用改良的化学浴沉积工艺生长的薄膜硫化镉的特性

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Cadmium sulfide polycrystalline films with potential for application as a solar cell window layer have been grown by a modified chemical bath deposition process, using ethylenediamine as a complexing agent and employing direct heating of the substrate. Films have been characterized using atomic force microscopy, scanning electron microscopy, grazing incidence X-ray diffraction, photoluminescence, photoconductivity, and optical absorption. Both as-grown films and films processed by annealing using cadmium chloride (CdCl/sub 2/) exhibit promising properties for this use. As-grown films are crystalline, possess low surface roughness (4.4 nm RMS), small grain size (18 nm), large direct bandgap (2.54 eV) and are highly textured with some degree of hexagonal phase present. On annealing with CdCl/sub 2/ there is an increase in surface roughness (24.5 nm RMS), modest grain growth (23 nm), a decrease in bandgap (2.44 eV) and diffraction data are consistent with increasing hexagonal character. There is also evidence of better crystalline quality and a large reduction in electron trapping states upon CdCl/sub 2/ annealing.
机译:通过使用乙二胺作为络合剂并直接加热基板,通过改良的化学浴沉积工艺,已经生长出有潜力用作太阳能电池窗口层的硫化镉多晶膜。使用原子力显微镜,扫描电子显微镜,掠入射X射线衍射,光致发光,光电导和光吸收对薄膜进行了表征。生长的薄膜和通过使用氯化镉(CdCl / sub 2 /)退火处理的薄膜都显示出有希望的性能。成膜后的薄膜是晶体,具有较低的表面粗糙度(4.4 nm RMS),较小的晶粒尺寸(18 nm),较大的直接带隙(2.54 eV),并且具有一定程度的六角形相,因此具有很高的纹理。用CdCl / sub 2 /退火时,表面粗糙度增加(24.5 nm RMS),晶粒生长适度(23 nm),带隙减小(2.44 eV),衍射数据与六角形特性增加相一致。也有证据表明,更好的晶体质量和CdCl / sub 2 /退火后电子俘获态的大量减少。

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