Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 /spl mu/m SiGe BiCMOS technology

摘要

A 1.5 GHz-2.0 GHz low noise amplifier (LNA) is designed in IBM 0.18 um BiCMOS technology using IBM design kits in cadence design flow. The fabricated LNA chip is packaged and tested. The measured results (gain, noise figure, and IIP3) correlate with the simulation very well. The results demonstrate that IBM SiGe technology, modeling, design kits and the cadence design flow are solid and accurate for RFIC design.