A shallow trench isolation using novel polysilazane-based SOG for deep-submicron technologies and beyond

摘要

A novel Spin-On-Glass (SOG), which is called polysilazane-based SOG (SZ-SOG), is shown to have the advantage of simple process, low moisture absorption and high throughput as well as provide excellent gap-fill ability. This material was successfully integrated in a STI layer of logic device without void formation and liner oxidation for the first time. This material shows no problem in view of material, physical integration and electrical requirements compared with the conventional HDP-CVD oxide process.