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A 2-GHz wide band low phase noise voltage-controlled oscillator with on-chip LC tank

机译:具有片上LC谐振腔的2 GHz宽带低相位噪声压控振荡器

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A 2 GHz wide band low phase noise voltage-controlled oscillator (VCO) is presented. To achieve excellent phase noise performance while maintaining wide band frequency tuning characteristic, a 6-bit digitally controlled switched-capacitor bank and tail current control scheme are used. The effect of the gate length of the MOS switches on the Q-factor of the LC tank is also analysed qualitatively. The measured phase noise is -115 dBc/Hz at an offset frequency of 100 kHz from a 2 GHz operating frequency. The total tuning range is as wide as 550 MHz (30%) and the measured RF output power is about -10 dBm at the single ended output buffer. The VCO gain varies from 21 MHz/V to 45 MHz/V for the entire operating frequency. The VCO is implemented using a 0.5 /spl mu/m SiGe BiCMOS process.
机译:提出了一种2 GHz宽带低相位噪声压控振荡器(VCO)。为了在保持宽带频率调谐特性的同时获得出色的相位噪声性能,使用了6位数字控制的开关电容器组和尾电流控制方案。还定性分析了MOS开关的栅极长度对LC储罐Q因子的影响。在距2 GHz工作频率100 kHz的偏移频率下,测得的相位噪声为-115 dBc / Hz。总调谐范围高达550 MHz(30%),在单端输出缓冲器处测得的RF输出功率约为-10 dBm。对于整个工作频率,VCO增益从21 MHz / V到45 MHz / V不等。 VCO使用0.5 / splμm/ m的SiGe BiCMOS工艺实现。

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