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A 2-GHz Wide Band Low Phase Noise Voltage-Controlled Oscillator with On- Chip LC tank

机译:具有片上LC罐的2-GHz宽带低相位噪声控制振荡器

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A 2-GHz wide band low phase noise Voltage-Controlled Oscillator (VCO) is presented, To achieve excellent phase noise performance while maintaining wide band frequency tuning characteristic, 6-bit digitally controlled switched-capacitors bank and tail current control scheme are used. The effect of the gate length of the MOS switches on the Q-factor of the LC tank is also analysed qualitatively. The measured phase noise is -115 dBc/Hz at an offset frequency of 100 kHz from a 2 GHz operating frequency. Total tuning range is as wide as 550 MHz (30%) and the measured RF output power is about -10 dBm at the single ended output buffer. The VCO gain varies from 21 MHz/V to 45 MHz/V for the entire operating frequency. The VCO is implemented using a 0.5-μm SiGe BiCMOS process.
机译:提出了一个2-GHz宽带低相位噪声控制振荡器(VCO),以实现优异的相位噪声性能,同时保持宽带频率调谐特性,使用6位数字控制的开关电容器组和尾电流控制方案。定性地分析了MOS开关对LC罐的Q系数的栅极长度的影响。测量的相位噪声以2GHz工作频率为100kHz的偏移频率为-115dBc / Hz。总调谐范围与550 MHz(30%)相同,测量的RF输出功率约为-10 dBm,在单端输出缓冲区。对于整个工作频率,VCO增益在21 MHz / v至45 MHz / V之间变化。 VCO使用0.5μmSiGe BICMOS工艺来实现。

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