A simple approach for modeling the influence of hot-carrier effect on threshold voltage of MOS transistors

摘要

Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concept in modern microcircuits. In this paper, a new simple expression based on the polynomial approximation is proposed for modeling the influence of hot-carrier effects on MOSFET threshold voltage. The method is especially useful to determine the degradation of MOS transistors in analogue building blocks and to predict operational reliability; therefore, it provides new possibilities in analogue IC design.