Depending on the image method and point source approximation method, a physics model was established, and the formula of photo-current versus surface recombination velocity was obtained. Thus, a light spot scanner photo-current (PC) measurement technique is set up to measure the interface properties of a silicon p-n junction. Using this method, the interface characteristics of angle beveled mesa structure high-voltage silicon p-n junction protected by organic materials or inorganic passivation films could be measured. From the experiment results and the normalization results, the surface recombination velocities of a silicon p-n junction under different conditions are obtained, and the results can be used to evaluate its interface property.
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