Improved breakdown voltage and hot-electron reliability PHEMT for high efficiency power amplifiers

摘要

By increasing the first recess width on the drain side of the gate, PHEMT breakdown was increased by as much as 5 V and hot electron RF stress was reduced by a factor of 2.5 to 3.5 with minor change in saturated power and power-added efficiency. Pulsed IV, loadpull and reliability measurement results are presented for PHEMT devices with various recess structures. The wide recess PHEMT provides necessary reliability margin for high efficiency and high mismatch operation of power amplifiers.