Fabrication of integrated twin-guide corner reflector surface-emitting lasers with reactive ion-beam etching

摘要

We demonstrate InGaAs/AlGaAs/GaAs single quantum well surface-emitting laser (SEL) with integrated twin-guide structure (ITG). Integrated twin-guide lasers have been designed with normal-mode analysis at /spl lambda/=980 nm to achieve maximum coupling efficiency. Then, we have utilized corner reflectors (CRs) on ITG structure and angled beam deflectors tilted at 45/spl deg/ with respect to the surface plane. The corner reflectors and the 45/spl deg/ beam deflectors were made by RIBE in order to obtain high power surface-emitting lasers (SELs). Corner reflectors were formed for the ITG active layer and 45/spl deg/ angled deflectors were located at the end of the output waveguide. ITG-CR-SELs were characterized with near-field intensity.