Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)

摘要

Semi-insulating amorphous hydrogenated carbon layers are the key to use of the potential of the punchthrough design for high power semiconductors. The reduction of device thickness enables reduction of device losses with unchanged blocking capability. The concept is especially successful for GTO thyristors and their corresponding diodes, where new applications in the 5 to 500 MW range have emerged.