Investigation of transport properties of carriers in GaAs using the PA method

摘要

In this paper, thermal and electron transport properties of GaAs single crystal were determined using the photoacoustic method with transmission detection configuration. Experimentally obtained values for amplitude and phase of PA signal were numerically fitted with theoretically calculated ones in order to determine parameters such as: excess carrier lifetime, thermal diffusivity, coefficient of carrier diffusion, the front and rear recombination velocity and absorption coefficient.