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Influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses

机译：该技术对EMP和UWB脉冲的影响对半导体破坏作用的影响

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In this paper the influence of TTL- and CMOS-technology on the destruction effects of semiconductors by impact of EMP and UWB pulses is determined. Different logic devices like NANDs and inverters were exposed to high amplitude transient pulses.

机译：本文确定了TTL和CMOS技术对EMP和UWB脉冲的影响对半导体破坏作用的影响。诸如NAND和反相器之类的不同逻辑设备暴露于高幅度瞬态脉冲。

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《》|2002年|p.87-92|共6页
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作者
Camp; M.; Garbe; H.; Nitsch; D.;
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原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词
electromagnetic pulse; electromagnetic compatibility; transistor-transistor logic; CMOS integrated circuits; NAND circuits; logic gates; semiconductor device destruction; EMP; UWB pulses; TTL-technology; logic devices; NANDs; inverters; high amplitud;

机译：电磁脉冲电磁兼容;晶体管晶体管逻辑; CMOS集成电路; NAND电路;逻辑门半导体器件破坏; EMP;超宽带脉冲TTL技术逻辑设备; NAND;逆变器高放大倍数;

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Influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses

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