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A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors

机译：大功率绝缘栅双极型晶体管热效应的三维TLM仿真方法

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《》|2002年|P.99-104|共6页
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Hocine; R.; Stambouli; M.A.B.; Saidane; A.;
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中图分类无线电电子学、电信技术;
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1. A three-dimensional transmission line matrix (TLM) simulation method for thermal effects in high power insulated gate bipolar transistors [J] . R. Hocine, D. Lim, S.H. Pulko, Circuit World . 2003,第3期

机译：大功率绝缘栅双极型晶体管热效应的三维传输线矩阵（TLM）仿真方法
2. A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors [J] . R. Hocine, A. Boudghene Stambouli, A. Saidane Microelectronic Engineering . 2003,第3期

机译：大功率绝缘栅双极型晶体管热效应的三维TLM仿真方法
3. Remaining useful life estimation for thermally aged power insulated gate bipolar transistors based on a modified maximum likelihood estimator [J] . Ismail Adla, Saidi Lotfi, Sayadi Mounir, European transactions on electrical power engineering . 2020,第6期

机译：基于改进的最大似然估计器剩余的热老化功率绝缘栅极双极晶体管的使用寿命估计
4. A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors [C] . R. Hocine, M. A. Boudghene Stambouli, A. Saidane IEEE Semiconductor Thermal Measurement and Management Symposium, Annual . 2002

机译：高功率绝缘栅极双极晶体管热效应的三维TLM仿真方法
5. High-performance insulated gate bipolar transistors for soft-switching power converters. [D] . Trivedi, Malay. 2001

机译：用于软开关功率转换器的高性能绝缘栅双极晶体管。
6. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss [O] . Hong-kai Mao, Ying Wang, Xue Wu, 2019

机译：低关断损耗的4H-SiC沟槽绝缘栅双极晶体管的仿真研究
7. Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature [O] . Bo-Ying Liu, Gao-Sheng Wang, Ming-Lang Tseng, 2018

机译：探索可靠电源模块的电热参数：绝缘栅双极晶体管结和壳温度
8. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. [R] . Ovrebo, G. K. 2015

机译：绝缘栅双极型晶体管（IGBT）功率模块中开关脉冲的热模拟。

A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors

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