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RF linearity study of SiGe HBTs for low power RFIC design. II. Analysis

机译:用于低功耗RFIC设计的SiGe HBT的射频线性研究。二。分析

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For pt. 1 see ibid., p. 70-73 (2002). An analysis is introduced for the third-order-intermodulation (IM3) cancellation induced by the emitter-terminations, which has been observed in part I of this paper. The analysis shows that the IM3 can be perfectly cancelled if the emitter impedance at the second harmonic and the sub-harmonic frequencies are terminated properly and if the effect from q/sub bc/ is negligible. When the effect of q/sub bc/ cannot be neglected, optimized source and load harmonic terminations are proposed to minimize the q/sub bc/ effects. Increasing the source impedance at the fundamental frequency is found effective in minimizing the residual IM3 that is not cancelled from the proposed terminations.
机译:对于pt。 1见同上,p。 70-73(2002)。本文介绍了对由发射极终止引起的三阶互调(IM3)抵消的分析,这一点已在本文的第一部分中进行了观察。分析表明,如果二次谐波的发射极阻抗和次谐波频率正确终止,并且q / sub bc /的影响可忽略不计,则IM3可以完美消除。当不能忽略q / sub bc /的影响时,建议采用优化的源和负载谐波终端,以最小化q / sub bc /的影响。发现在基本频率上增加源阻抗可以有效地使残留的IM3最小,该残留的IM3不会从建议的端接中消除。

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