首页> 外文会议> >Monte carlo simulations of carrier transport in diamond and GaN thin films: The effect of dislocations and electron interactions

【24h】

Monte carlo simulations of carrier transport in diamond and GaN thin films: The effect of dislocations and electron interactions

机译：金刚石和GaN薄膜中载流子传输的蒙特卡洛模拟：位错和电子相互作用的影响

获取原文

页面导航

著录项
相似文献
相关主题

著录项

来源
《》|2001年|P.326-330|共5页
会议地点
作者
Miskovsky; N.M.; Lerner; P.B.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Monte Carlo simulation of the interaction of electrons with supported and unsupported thin films [J] . Maurizio Dapor Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2003,第Apr期

机译：电子与支撑和不支撑薄膜相互作用的蒙特卡洛模拟
2. First-principle-based full-dispersion Monte Carlo simulation of the anisotropic phonon transport in the wurtzite GaN thin film [J] . Ruikang Wu, Run Hu, Xiaobing Luo Journal of Applied Physics . 2016,第14期

机译：基于第一原理的纤锌矿GaN薄膜中各向异性声子输运的全色散蒙特卡罗模拟
3. Electrothermal Monte Carlo Simulation of GaN HEMTs Including Electron–Electron Interactions [J] . Electron Devices, IEEE Transactions on . 2010,第3期

机译：包含电子-电子相互作用的GaN HEMT的电热蒙特卡罗模拟
4. Monte carlo simulations of carrier transport in diamond and GaN thin films: The effect of dislocations and electron interactions [C] . Miskovsky N.M., Lerner P.B., Institute of Electric and Electronic Engineer International Vacuum Microelectronics Conference . 2001

机译：钻石和GaN薄膜中载波运输的蒙特卡罗模拟：脱位和电子相互作用的效果
5. QUANTUM MONTE CARLO SIMULATIONS OF ULTRATHIN FILM ELECTRON SYSTEMS. [D] . JOHNSON, LARRY VERNON. 1982

机译：超薄膜电子系统的量子蒙特卡罗模拟。
6. Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation [O] . Alberto Curcella, Romain Bernard, Yves Borensztein, 2018

机译：在Ag（111）上从硅单层过渡到Si薄膜：实验数据和Monte Carlo模拟之间的比较
7. Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations [O] . Jingtian Fang, Massimo V. Fischetti, Ronald D. Schrimpf, 2019

机译：基于第一原理计算的Alxga1-XN / GaN晶体管的电子传输性能和Boltzmann-areation Monte Carlo模拟
8. Monte-Carlo Simulation of High-Field Electron Transport in Alternating-Current Thin-Film Electroluminescent Devices. [R] . Bhattacharyya, K., Goodnick, S. M., Wager, J. F. 1993

机译：交流薄膜电致发光器件中高场电子输运的monte-Carlo模拟。

Monte carlo simulations of carrier transport in diamond and GaN thin films: The effect of dislocations and electron interactions

著录项

相似文献

相关主题

期刊订阅