Improvement of low-frequency noise characteristics of n-MOSFETs using backsurface argon-ion bombardment

摘要

A low-energy (550 eV) argon-ion beam with 0.5 mA/cm/sup 2/ of current density was used to bombard the backsurface of polycrystalline-silicon-gate MOSFETs with various channel dimensions and MOS capacitors after the completion of all conventional processing steps. The low-frequency noise characteristics of the MOSFETs were investigated. The results showed that the 1/f noise in the linear region and the saturation region can be clearly decreased.