Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

摘要

The resonance frequency can be externally controlled which offers tunability of oscillation. The THz plasma resonant phenomena, however, has only been measured by illuminating a AlGaAs/GaAs HEMT with a single 2.5-THz gas laser source and there has been no experimental reports on the resonance frequency dependence. This paper demonstrates the first experiment on GaAs MESFETs.