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MICROSTRUCTURE AND PROPERTIES OF ANTIMONY-DOPED TIN OXIDE THIN FILM DEPOSITED BY SOL-GEL METHOD

机译:溶胶凝胶法制备的掺锑二氧化锡薄膜的组织和性能

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The antimony-doped tin (ATO) thin films were deposited on glass substrates with and without SiO2-coated by sol-gel process with annealing temperature of 450亷. The structural, electrical and optical properties of the thin films were studied in details. The X-ray diffraction (XRD) analysis revealed that the thin films retained the tetragonal rutile structure as undoped ones. The sheet resistivity decreased obviously with the increase of the thickness, which was around 129/仩 with the thickness of about 95nm. The average transmittance in the visible range was above 65%, and the reflectance in the infrared range for ATO films on Si substrates increased from 20% to 40% with the increase of the wavelength.
机译:将锑掺杂锡(ATO)薄膜沉积在具有和不具有SiO2涂层的玻璃基板上,并通过溶胶-凝胶工艺在450℃的退火温度下进行沉积。详细研究了薄膜的结构,电学和光学性质。 X射线衍射(XRD)分析表明,薄膜保留了四方金红石结构,而未掺杂。薄膜电阻率随厚度的增加而明显降低,厚度约为95nm时约为129 /仩。硅衬底上的ATO薄膜在可见光范围内的平均透射率高于65%,而在红外范围内的反射率则随着波长的增加而从20%增加到40%。

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