Negative differential resistance in ultra-thin Ge-on-insulator FETs

摘要

We report on ambipolar GeOI FETs fabricated on ultra-thin films of single crystal Ge, epitaxially grown on a high-k crystalline lanthanum-yttrium-oxide lattice matched to Si (111) substrate. The GeOI FETs show promising transistor characteristics at room temperature, while at low temperatures they exhibit negative differential resistance (NDR) in the drain current circuit.