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Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices

机译:在晶格工程衬底(SOLES)上制造硅,作为CMOS和光电器件单片集成的平台

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We report the fabrication of a novel substrate platform for the monolithic integration of Si-based CMOS and GaAs-based optoelectronic devices. This platform, which we refer to as silicon on lattice-engineered substrate (SOLES), consists of a compositionally graded SiGe buffer buried underneath a silicon-on-insulator (SOI) structure, all fabricated on a Si substrate.
机译:我们报告了一种新颖的衬底平台的制造,用于基于Si的CMOS和基于GaAs的光电器件的单片集成。这个平台,我们称为晶格工程衬底上的硅(SOLES),由埋在绝缘体上硅(SOI)结构下方的成分分级的SiGe缓冲液组成,所有这些均在Si衬底上制造。

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