Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations

摘要

We have demonstrated control and characterization of strain in SiGe and Ge layers on Si(001) substrates with engineered misfit dislocations at the heterointerface. X-ray microdiffraction revealed quantitatively fine structures in micrometer-sized regions of the SiGe layers. The introduction of PEDN can alter the manner of strain relaxation of SiGe on Si(001) and raise the possibility of solving problems caused by the 60/spl deg/ dislocation.