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Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition

机译：基体偏压对螺旋波等离子体化学气相沉积中纳米晶碳化硅薄膜制备的影响

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《》|2005年||共6页
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1. Fabrication of nanocrystalline silicon carbide thin film by helicon wave plasma enhanced chemical vapour deposition [J] . Wei Yu, Wanbing Lu, Yanbin Yang, Thin Solid Films . 2007,第5期

机译：螺旋波等离子体增强化学气相沉积法制备纳米晶碳化硅薄膜
2. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition [J] . LU Wan-bing, YU Wei, WU Li-ping, 中国航空学报（英文版） . 2006,第0z1期

机译：螺旋波等离子体增强化学气相沉积法沉积发光纳米晶碳化硅薄膜
3. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition [J] . LU, Wan-bing, YU, 中国航空学报：英文版 . 2006,第B12期

机译：螺旋波等离子体增强化学气相沉积法沉积发光纳米晶碳化硅薄膜
4. Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition [C] . Wei Yu, Wanbing Lu, Chunsheng Wang, Conference on ICO . 2006

机译：衬底偏置对Helicon波等离子体化学气相沉积中纳米晶碳化硅薄膜制备的影响
5. Nanocrystalline and amorphous silicon thin film transistors deposited by microwave plasma electron cyclotron resonance chemical vapor deposition: Material analysis, device fabrication and characterization. [D] . Teng, Lihong. 2003

机译：微波等离子体电子回旋共振化学气相沉积法沉积的纳米晶和非晶硅薄膜晶体管：材料分析，器件制造和表征。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Preparation of cubic boron nitride thin film by the helicon wave plasma enhanced chemical vapor deposition [O] . Seon‐Hyo Kim, Ig‐Hyeon Kim, Ki‐Sung Kim 1996

机译：通过Helicon波等离子体增强化学气相沉积的立方硼氮化物薄膜的制备
8. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition [R] . Moutinho, H. R., Jiang, C. S., Nelson, B., 2003

机译：衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响

Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition

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