Great enhancement of the current induced magnetization switching effect in exchange biased spin valves with nano oxide layer

摘要

The magnetization reversal of a lateral submicrometer-sized magnetic layer by a spin-polarized current has been known recently. In this work, the current induced magnetization switching effect at RT in an exchange biased spin valve with nano oxide layer structure is reported for the first time. A great enhancement of the effect has been observed. The critical switching current can be lowered by about one order compared to that in a simple trilayer spin valve with similar layer thickness. The product of the absolute resistance change and the junction area is almost three times larger than that in the simple spin valve.