High-temperature, low-power 8-Meg/spl Omega/ by 1.2-MegHz SOI-CMOS transimpedance amplifier for MEMS-based wireless sensors

摘要

This paper reports a high-temperature, wide-gain-bandwidth SOI-CMOS transimpedance amplifier that is well suited for application to MEMS-based impedance sensors and oscillators. The amplifier was fabricated using a fully depleted 0.5-/spl mu/m technology and achieves a gain-bandwidth of 8 Meg/spl Omega/ by 1.2 MegHz at room temperature, drawing just 0.66 mW from a 3.3-V power supply. Gain and bandwidth remain above 2 Meg/spl Omega/ and 0.3 MegHz, respectively, at all temperatures up to 300/spl deg/C, while power consumption remained under 1 mW. Die area is just 8500 /spl mu/m/sup 2/.