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Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT

机译：AlGaN / GaN HEMT电流-电压特性的温度依赖性

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In this paper, we report on the DC and gate-lag pulsed (200ns) I-V characteristics of GaN-based HEMTs with and without SiN passivation between 77 K and 300 K.

机译：在本文中，我们报告了在77 K和300 K之间具有和不具有SiN钝化的GaN基HEMT的直流和栅极滞后脉冲（200ns）I-V特性。

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《》|2003年|p.63-64|共2页
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Shen; L.; Chini; A.; Coffie; R.; Buttari; D.; Heikman; S.; Keller; S.; Mishra; U.;
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中图分类无线电电子学、电信技术;
关键词
aluminium compounds; gallium compounds; silicon compounds; III-V semiconductors; wide band gap semiconductors; power HEMT; passivation; DC current-voltage characteristics; AlGaN/GaN HEMT; gate-lag current-voltage characteristics; SiN passivation; 200 ns;

机译：铝化合物;镓化合物;硅化合物; III-V族半导体;宽带隙半导体;功率HEMT;钝化; DC电流-电压特性; AlGaN / GaN HEMT;栅滞后电流-电压特性; SiN钝化; 200 ns;

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专利

1. Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures [J] . Chang YC, Tong KY, Surya C Semiconductor science and technology . 2005,第2期

机译：AlGaN / GaN HEMT高温电流-电压特性的数值模拟
2. Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K [J] . T. Laurent, R. Sharma, J. Torres, Acta Physica Polonica . 2011,第2期

机译：从室温到15 K的AlGaN / GaN HEMT脉冲电流电压特性的测量
3. Temperature Dependent Analytical Model For Current-voltage Characteristics Of Algan/gan Power Hemt [J] . M.A. Huque, S.A. Eliza, T. Rahman, Solid-State Electronics . 2009,第3期

机译：Algan / gan Power Hemt电流-电压特性的温度相关分析模型
4. Temperature dependence of the Current-Voltage Characteristics of AlGaN/GaN HEMT [C] . Likun Shen, Alessandro Chini, Robert Coffie, Device Research Conference . 2003

机译：AlGaN / GaN HEMT电流 - 电压特性的温度依赖性
5. Temperature Dependence of Electroluminescence and Current-Voltage Characteristics of Arrays of Deep Ultraviolet AlGaN Micropixel LED [D] . Patel, Dhruvinkumar Prakashchandra. 2021

机译：深度紫外线阵列LED电致发光的温度依赖性和电流 - 电压特性
6. Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature [O] . Tuan-Anh Vuong, Ho-Young Cha, Hyungtak Kim 2021

机译：薄Algan屏障PT-AlGaN / GaN HEMT气体传感器的响应增强在高温下源连接栅极配置
7. Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K [O] . T. Laurent, R. Sharma, J. Torres, 2011

机译：从室温到15 k的AlGaN / GaN Hemts的脉冲电流 - 电压特性测量

Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT

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