RF passive devices on Si substrates with close to ideal EM performance

摘要

RF passive devices, such as transmission lines, inductors, antennas and band-pass filters, fabricated on Si substrates, show performance close to that obtained by E-M simulations, from 1 to 110 GHz. This was achieved using an optimized /spl sim/4 MeV proton implantation process performed after device fabrication to avoid contamination and can be masked by photoresist.