Intrinsic temperature sensitivities of 1.3 /spl mu/m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers

摘要

The apparent temperature stability of GaInNAs-based lasers is attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.